High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
نویسندگان
چکیده
منابع مشابه
High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30lm diameter devices exhibited leakage current below 3fA under reverse bias up t...
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High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN hetero-structures using a microwavecompatible fabrication process. Current-voltage, spectral responsivity, noise, and high-speed characteristics of the detectors were measured and analyzed. Dark currents lower than 1 pA at bias voltages as high as 30 V wer...
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We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devic...
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There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs). In this paper, APDs operating at 280 nm, within the solar-blind region of...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2005
ISSN: 0038-1101
DOI: 10.1016/j.sse.2004.07.009